Luminescent device and process of manufacturing the same

ABSTRACT

In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. 
     As the insulating films  117, 317  and  417  provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline metal ion and an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline metal ion and an alkaline-earth metal ion, for example, a silicon nitride film containing a large amount of fluorine, a silicon oxynitride film containing a large amount of fluorine or an organic resin film containing a particle consisted of an antimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound is used.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an electric appliance using aluminescent device which is formed by making a semiconductor element(element using a semiconductor thin film) on a substrate using aluminescent element having a film containing an organic compound withwhich luminescence or phosphorescence is obtained by impressing anelectric field, representatively, EL (electroluminescence) displaydevice and its EL display device as a display section.

It should be noted that in the present invention, a luminescent elementis referred to an element in which an organic compound layer is providedbetween a pair of electrodes, a luminescent device is referred to animage display device or a luminescent device using a luminescentelement. Moreover, it is defined herein that the category of luminescentdevices includes all of a module in which a connector, for example, aFlexible Printed Circuit (FPC), a Tape Automated Bonding (TAB) or a TapeCarrier Package (TCP) is attached to a luminescent element, a module inwhich a print-wiring board is provided on the tip of the TAB or TCP, ora module in which an IC (integrated circuit) is directly mounted on aluminescent element by a Chip On Glass (COG) method.

2. Related Art

In recent years, the technology for forming a TFT on a substrate hasbeen largely advanced, and the development applied to an active matrixtype display device has been proceeded. Particularly, since electricfield effect mobility of a TFT using a polysilicon film is higher thanthat of the conventional TFT using an amorphous silicon film (which isalso referred to as “mobility”), an operation at a high speed is capableof being carried out.

Such an active matrix type display device now attracts a great deal ofattention since it obtains a variety of advantages such as the reductionof the manufacturing costs, the miniaturization of a display device, theraising of yield, the reduction (increase?) of throughput and the likeby utilizing a method in which a variety of circuits and elements aremade up on the same substrate. A luminescent element using an organiccompound having the characteristics such as being thin type, lightweighted, having a high speed responsibility, direct current low voltagedrive and the like as an emitter is expected to be applied to the nextgeneration flat panel display. Particularly, a display device in whichluminescent elements (which is also referred to as EL element) arearranged in a matrix shape (hereinafter, referred to as “active matrixtype EL display device”) is considered to be advantageous when comparingto the conventional liquid crystal display devices from the viewpointthat it has a wide angular field of view and is excellent in visibility.

An active matrix type EL display device provides a switching elementconsisted of a TFT (hereinafter, referred to simply as switchingelement) at each pixel, makes a drive element for performing a currentcontrol by its TFT for switching (hereinafter, referred to as TFT forcurrent control) operate and makes an EL layer (strictly referring toit, it is an emitting layer) emit. For example, an EL display devicedescribed in Japanese Unexamined Patent Publication No. H10-189252gazette is known.

As for an active matrix type EL display device, two kinds of structuresare considered from the viewpoint of emission direction of the light.One is a structure in which the light emitted from the EL elementtransmits through the opposed substrate and is irradiated into theobserver's eyes. In this case, the observer can recognize the image fromthe opposed substrate side. Another one is a structure in which thelight emitted from the EL element transmits through an element substrateand is irradiated into the observer's eyes. In this case, the observercan recognize the image from the element substrate side.

In the case where an active matrix type EL display device was intendedto prepare, after a thin film transistor (hereinafter, referred to asTFT) was formed on the insulating surface, an interlayer insulating filmis formed on the TFT, an anode of a luminescent element electricallyconnected to the TFT via the interlayer insulating film is formed, andfurther on the anode, an organic compound layer is formed, and further,after the organic compound layer was formed, a cathode is formed wherebya luminescent element is formed.

As a material used for a cathode, it is said that it is preferable touse a metal having a small work function (representatively, metalelements belonging to I group or II group of the periodic table) or analloy containing these. Since the smaller the work function is, the morethe luminous efficiency is enhanced, it is preferable that among these,as a material used for a cathode, an alloy containing Li (lithium),which is one of alkaline metals, is used.

However, in the case where a material containing an alkaline metal isused for a cathode, while it can contributes to the enhancement of theluminous efficiency of the luminescent element, there is a fear of thealkaline metal ion used for the cathode being diffused to be mixed intoan active layer of the TFT.

In a TFT, when the voltage is applied to a gate electrode, depending onits polarity, an impurity ion of an alkaline metal or the like isattracted to an active layer side. Then, in the case where theseimpurity ions cannot be blocked by an insulating film for covering theactive layer, these are mixed into the interface between the insulatingfilm and the active layer and into the active layer, causes the increaseof interface level and becomes trapping center of a carrier, it isconsidered to cause the variation of electric characteristics of the TFTand the lowering of the reliability for the TFT.

At present, as an insulating film for covering an active layer of TFT,an inorganic insulating film represented by a silicon oxide film, asilicon nitride film, a silicon oxynitride film and the like and anorganic resin film represented by a polyimide film, an acrylic film andthe like are used. The experiment for confirming the blocking effects ofthese insulating films were carried out.

As a result of examining the characteristic variation of the MOS bypreparing a MOS on a substrate having an insulating surface and formingan Al—Li alloy via an insulating film (silicon nitride film, siliconoxynitride film) located above the MOS, the characteristic variation waslarge, and it is considered that the cause of it is mainly attributed tothe fact that Li has been mixed into the active layer.

Therefore, it is considered that the variation of TFT characteristicsand the lowering of the reliability are also occurred in the case wherean EL element having a cathode containing an alkaline metal on TFT wasformed.

From the results described above, an insulating film provided between aTFT and an EL element was not sufficient for preventing an impurity ion(representatively, alkaline metal ion) from diffusing from the ELelement into the TFT.

Moreover, also in the case where a material containing an alkaline metalin an organic compound layer was used, it is considered that thediffusion of an impurity ion (representatively, alkaline metal ion) fromthe EL element into the TFT is generated.

Moreover, although there are some cases where what is called a bufferlayer is formed between a cathode and an anode, but also in the casewhere a material containing an alkaline metal in this buffer layer wasused, it is considered that the diffusion of the impurity ion(representatively, alkaline metal ion) from the EL element to the TFT isgenerated.

Moreover, also in the case where a material containing an alkaline-earthmetal (which is also referred to as alkaline earth) in a cathode, ananode, a buffer layer, or an organic compound layer was used, similarly,there is a fear of the diffusion of an impurity ion (representatively,alkaline-earth metal ion) from the EL element to the TFT being generatedand causing the variation of characteristics of the TFT.

BRIEF SUMMARY OF THE INVENTION

As for the present invention, the present inventors have directed theirattention to the above-described problems, and clarified that as aninsulating film provided between a TFT and an EL element, it ispreferable that a material for not only blocking the diffusion of animpurity ion such as an alkaline metal ion, an alkaline-earth metal ionor the like, but also absorbing an impurity ion such as an alkalinemetal ion, an alkaline-earth metal ion or the like is used, and furthera material endurable to the temperature for the processing, which isperformed later, is suitable for its use.

As a material for matching these conditions, a silicon nitride filmcontaining a large amount of fluorine is listed as an example. Thefluorine concentration contained in the film of the silicon nitride filmmay be 1×10¹⁹/cm³ or more, preferably, the composition ratio of thefluorine in the silicon nitride film may be set in the range from 1 to5%. Fluorine in the silicon nitride film is bonded to an alkaline metalion, an alkaline-earth metal ion or the like, and absorbed in the film.Moreover, a silicon oxynitride film containing a large amount offluorine is listed as another example. Moreover, an organic resin filmcontaining a particle consisted of an antimony (Sb) compound, a tin (Sn)compound, or an indium (In) compound for absorbing an alkaline metalion, an alkaline-earth metal ion or the like, for example, an organicresin film containing antimony pentaoxide particle (Sb₂O₅.nH₂O) is alsolisted as the other example. It should be noted that this organic resinfilm contains a particle having an average diameter of 10-20 nm, and itsoptical transparency is also very high. An antimony compound representedby this antimony pentaoxide particle tends to easily absorb an impurityion such as an alkaline metal ion or the like, and an alkaline-earthmetal ion.

It should be noted that needless to say, it might be a configuration inwhich an insulating film consisted of a material for absorbing theabove-described impurity ion is provided on one portion or the wholesurface.

Moreover, in the case where a silicon nitride film containing fluorineat the composition ratio in the range from 1 to 5% is used as aninsulating film for absorbing an impurity ion such as an alkaline metalion, an alkaline-earth metal ion or the like, it is capable of beingmade so that degas from the organic resin film does not exert a badinfluence on a luminescent element.

Moreover, as for the present invention, preferably it is configured sothat an anode containing an alkaline metal ion and an alkaline-earthmetal ion or an organic compound layer containing an alkaline metal{ion} and an alkaline-earth metal ion is arranged apart from an activelayer of a TFT as distantly as possible.

As for a configuration of the present invention disclosed in the presentspecification, in a semiconductor device having a TFT provided on aninsulating surface of a substrate and a luminescent element forelectrically connecting to the TFT,

a luminescent device is characterized in that the said luminescentelement is equipped with an organic compound layer, an anode and acathode containing an alkaline metal, and the said luminescent devicehas an insulating layer for absorbing the said alkaline metal or aninsulating layer for preventing the said alkaline metal from diffusingbetween the said TFT and the said luminescent element.

Moreover, as the other configuration of the present invention,

in a semiconductor having a TFT provided on an insulating surface of asubstrate and a luminescent element for electrically connecting to theTFT,

a luminescent device is characterized in that the said luminescentelement is equipped with an organic compound layer containing analkaline metal, an anode, and a cathode, and the said luminescent devicehas an insulating layer for absorbing the said alkaline metal or aninsulating layer for preventing the said alkaline metal from diffusingbetween the said TFT and the said luminescent element.

Moreover, as the other configuration of the present invention,

in a semiconductor having a TFT provided on an insulating surface of asubstrate and a luminescent element for electrically connecting to theTFT,

a luminescent device is characterized in that the said luminescentelement is equipped with an organic compound layer, an anode, a bufferlayer containing an alkaline metal, and a cathode, and the saidluminescent device has an insulating layer for absorbing the saidalkaline metal or an insulating layer for preventing the said alkalinemetal from diffusing between the said TFT and the said luminescentelement.

Moreover, an insulating film for absorbing an alkaline-earth metal ionmay be used, as the other configuration of the present invention,

in a semiconductor having a TFT provided on an insulating surface of asubstrate and a luminescent element for electrically connecting to theTFT,

a luminescent device is characterized in that the said luminescentelement is equipped with an organic compound layer, an anode, and acathode containing an alkaline-earth metal, and the said luminescentdevice has an insulating layer for absorbing the said alkaline-earthmetal or an insulating layer for preventing the said alkaline-earthmetal from diffusing between the said TFT and the said luminescentelement.

Moreover, as the other configuration of the present invention,

in a semiconductor having a TFT provided on an insulating surface of asubstrate and a luminescent element for electrically connecting to theTFT,

a luminescent device is characterized in that the said luminescentelement is equipped with an organic compound layer containing analkaline-earth metal, an anode, and a cathode, and the said luminescentdevice has an insulating layer for absorbing the said alkaline-earthmetal or an insulating layer for preventing the said alkaline-earthmetal from diffusing between the said TFT and the said luminescentelement.

Moreover, as the other configuration of the present invention,

in a semiconductor having a TFT provided on an insulating surface of asubstrate and a luminescent element for electrically connecting to theTFT,

a luminescent device is characterized in that the said luminescentelement is equipped with an organic compound layer, an anode, a bufferlayer containing an alkaline-earth metal, and a cathode, and the saidluminescent device has an insulating layer for absorbing the saidalkaline-earth metal or an insulating layer for preventing the saidalkaline-earth metal from diffusing between the said TFT and the saidluminescent element.

Conventionally, an insulating film provided between a TFT and an ELelement had a performance only for blocking an impurity ion ofcomparatively low level, however, by making it a configuration of theabove-described present invention, the diffusion of an impurity ion(representatively, alkaline metal ion and alkaline-earth metal ion) fromthe EL element can be sufficiently prevented.

In the present invention, alkaline metals are referred to six elementsof lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs)and francium (Fr) in general, and alkaline-earth metals referred tomagnesium (Mg), calcium (Ca), strontium (Sr) and Barium (Ba).

Moreover, in the present specification, an organic compound layer isreferred to a layer containing at least organic compound, it may containan inorganic material (silicon, silicon oxide or the like), and anorganic compound layer contains a hole implantation layer, a holetransport layer, a luminescent layer, a blocking layer, an electrontransport layer and an electron implantation layer or the like.

It should be noted that luminescence obtained from a luminescence of thepresent invention includes a luminescence by either of singlet excitedstate or triplet excited state, or both of these.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are diagram showing embodiments of 1-3 of the presentinvention;

FIGS. 2A to 2E are diagram showing preparing processes of Example 1 ofthe present invention;

FIGS. 3A to 3C are diagram showing preparing processes of Example 1 ofthe present invention;

FIGS. 4A and 4B are sectional block diagram and top plan view of an ELmodule of Example 2 of the present invention;

FIGS. 5A and 5B are diagram showing a configuration of a pixel sectionof Example 3 of the present invention;

FIG. 6 is a diagram showing Example 4 of the present invention; and

FIGS. 7A to 7H are diagram showing one example of an electronic device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1

As embodiment 1 of the present invention, a sectional structure of apixel section of a luminescent device will be described below withreference to FIG. 1A.

In FIG. 1A, a semiconductor element is formed on a substrate 101. Itshould be noted that as the substrate 101, a glass substrate is used asa substrate having an optical transparency, but quartz substrate may beused. Moreover, as a semiconductor element, a TFT is used, an activelayer of each TFT has at least a channel formation region, a sourceregion, and a drain region. Moreover, an active layer of each TFT iscovered with a gate insulating film 104, and a gate electrodesuperimposing with the channel formation region via a gate insulatingfilm is formed. Moreover, an interlayer insulating film for covering agate electrode is provided, on the interlayer insulating film, anelectrode for electrically connecting to a source region or a drainregion of each TFT is provided. Moreover, an anode 122 for electricallyconnecting to an electrode reaching to the drain region of a TFT forcurrent control 202 which is a p-channel type TFT, is provided.Moreover, an insulating layer 123 having an opening portion so as tocover the edge of the anode 122 and have an edge in a taper shape isprovided. Moreover, an organic compound layer consisted of a holegeneration layer 124 and an organic layer 125 is provided on the anode122, a cathode 126 is provided on the organic compound layer, therebyforming a luminescent element. It should be noted that a luminescentelement is sealed by a cover member 128 while remaining a space 129 asit was.

In this embodiment, it is configured that an active layer of a TFT iscovered by a gate insulating film 104, and further, it is covered by aninterlayer insulating film consisted of a protective film 115, anorganic resin film 116, and a film 117 for absorbing an impurity ion. Asa result of thus being configured, the diffusion of an impurity ion(representatively, alkaline metal ion and alkaline-earth metal ion) froma luminescent element can be sufficiently prevented.

Particularly, in the case where a material containing an alkaline metaland an alkaline-earth metal is used as a material for a cathode, ananode, a buffer layer, or an organic compound layer, the presentinvention is very effective.

In the present embodiment, as for the film 117 for absorbing an impurityion, a silicon nitride film containing a large amount of fluorine, or anorganic resin film containing a particle consisted of an antimony (Sb)compound for absorbing an alkaline metal ion, a tin (Sn) compound, orindium (In) compound or these laminated layer film may be used.

As the film 117 for absorbing an impurity ion, in the case where asilicon nitride film containing a large amount of fluorine is used, whenthe fluorine concentration contained in the film of the silicon nitridefilm is made 1×10¹⁹/cm³ or more, preferably, the composition ratio ofthe fluorine in the silicon nitride film is made in the range from 1 to5%, the fluorine in the silicon nitride film is bonded to the impurityion being diffused, captures it in the film. Once the impurity ioncaptured in the film, particularly, in the case of an alkaline metal ion(for example, Li), its bonding force to fluorine is very strong,therefore, it is scarcely released. Moreover, similarly, analkaline-earth metal ion (for example, Mg) has a very strong bondingforce to fluorine.

Moreover, as the film 117 for absorbing an impurity ion, in the casewhere a silicon nitride film containing fluorine at the compositionratio of 1 to 5%, a silicon oxynitride film (SiONF film) containingfluorine or a silicon oxide film (SiOF film) containing a large amountof fluorine is used, it can be made so that the degas from the organicresin film 116 does not exert a bad influence on the luminescentelement.

Moreover, as the film 117 for absorbing an impurity ion, an organicresin film containing a particle consisted of an antimony (Sb) compound,a tin (Sn) compound, or an indium (In) compound is used, the particlecontained in the film absorbs the impurity ion, particularly, analkaline metal ion and an alkaline-earth metal ion. It should be notedthat this organic resin film is made by mixing the above-describedparticle with one species or a plurality of species selected from anacetylacetonatochelate compound, an organic silicon compound, a metalalkoxide, and polysilazane and dispersed in an organic solvent.Moreover, since an EL element is very weak in the moisture, it isnecessary to suppress the release of the moisture from the film 117 andthe organic resin film 116 for absorbing an impurity ion.

Moreover, as for an EL element, if the thickness of the film of theorganic compound layer is not uniform, since the variation is generatedin its luminescence, it is preferable that an interlayer insulating filmhaving a high flatness is used so that the film thickness of the organiccompound layer having a film thickness becomes as uniform as possible.It should be noted that in the present embodiment, it is configured sothat the flatness is enhanced using the organic resin film 116 of whichthe film thickness is thicker than that of the film 117 for absorbing animpurity ion. Moreover, if it has a sufficient flatness, an inorganicinsulating film may be used instead of the organic resin film 116.

Moreover, the protective film 115 is a silicon nitride film, a siliconoxynitride film, and has an effect of preventing an impurity ion fromdiffusing from the organic resin film 116. In addition to this, theprotective film 115 has also an effect of preventing an impurity ionfrom diffusing from the film 117 for absorbing an impurity ion and fromthe luminescent element. Moreover, the protective film 115 is providedfor the purpose of preventing a gate electrode from denaturing such asoxidization or the like at the time of heat activation. Moreover, as theprotective film 115, a silicon nitride film containing fluorine at thecomposition ratio of 1 to 5% is used, and absorbs an impurity ion, andfurther may prevent an impurity ion from diffusing.

It should be noted that a top gate type TFT has been exemplified anddescribed herein, but not particularly limited to use of it. Instead ofthe top gate type TFT, it is capable of being applied to a bottom gatetype TFT, a forward stagger type TFT and other TFT structures.

Moreover, herein, since the light emitted from a luminescent element hasthe emitting direction which transmits through the substrate 101, it ispreferable that all of the protective film 115, organic resin film 116,the film 117 for absorbing an impurity ion have a sufficient opticaltransparency.

Embodiment 2

As embodiment 2 of the present invention, a sectional structure of apixel section of a luminescent device will be described below withreference to FIG. 1B. It should be noted that since the components aresame with those of embodiment 1 except for the configuration of aninterlayer insulating film, the detailed description is omitted.

In the present embodiment, it is configured so that an active layer of aTFT is covered with the gate insulating film 104, and further, a film317 for absorbing an impurity ion. As a result of being thus configured,the diffusion of an impurity ion (representatively, alkaline metal ion,and alkaline-earth metal ion) from the luminescent element can besufficiently prevented.

As the film 317 for absorbing an impurity ion, a film which has asufficient flatness and transparency, and of which the moisture releasefrom the film is scarcely performed is used.

In the present embodiment, as the film 317 for absorbing an impurityion, a silicon nitride film containing a large amount of fluorine, or anorganic resin film containing a particle consisted of an antimony (Sb)compound, a tin (Sn) compound, or an indium (In) compound, or theselaminated film may be used.

Embodiment 3

As embodiment 3 of the present invention, a sectional structure of apixel section of a luminescent device will be described below withreference to FIG. 1C. It should be noted that since the components aresame with those of embodiment 1 except for the configuration of aninterlayer insulating film, the detailed description is omitted.

In the present mode for carrying out, it is configured so that an activelayer of a TFT is covered with the gate insulating film 104, andfurther, a film 417 for absorbing an impurity ion and an interlayerinsulating film consisted of an insulating film 418. As a result ofbeing thus configured, the diffusion of an impurity ion(representatively, alkaline metal ion, and alkaline-earth metal ion)from the luminescent element can be sufficiently prevented.

In the present mode for carrying out, as the film 417 for absorbing animpurity ion, a silicon nitride film containing a large amount offluorine, or an organic resin film containing a particle consisted of anantimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound,or these laminated film may be used.

As the film 417 for absorbing an impurity ion, a film which has asufficient flatness and optical transparency, and of which the moisturerelease from the film is scarcely performed is used.

Moreover, as for an insulating film 418, it is capable of being made sothat the moisture and degas from the film 417 for absorbing an impuritydoes not exert a bad influence on a luminescent element.

The present invention comprising the above-described configuration willbe further described in detail below with Examples indicated below.

EXAMPLES Example 1

In the present example, a method for preparing a pixel section of aluminescent element will be described below with reference to FIG. 2 andFIG. 3. Moreover, in the present Example, as a semiconductor, a casewhere a thin film transistor (TFT) is formed will be described below.

First, a crystalline silicon film is formed on a transparent substrate101 in a film thickness of 50 nm. It should be noted that as a methodfor forming a film of a crystalline silicon film, known means might beused. Subsequently, semiconductor layers 102 and 103 (hereinafter,referred to as active layer) consisted of a crystalline silicon film inan island shape are formed by patterning a crystalline silicon film.Subsequently, the gate insulating film 104 consisted of a silicon oxidefilm is formed by covering the active layer 102 and 103. Subsequently,the gate electrode 105 and 106 are formed on the gate insulating film104. (FIG. 1A) As a material for forming the gate electrodes 105, 106,an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy materialof which main components are the said elements or a compound materialmay be used. Here, for gate electrodes 105 and 106, a tungsten filmhaving a film thickness of 350 nm or a tungsten alloy film is used.Moreover, the gate electrode may be a laminated structure having twolayers or more, or it may be three layer structure by in turn laminatinga tungsten film having a film thickness of 50 nm, an alloy film ofaluminum and silicon (Al—Si) having a film thickness of 500 nm.

Subsequently, as shown in FIG. 2 B, by utilizing the gate electrodes 105and 106 as a mask, an element belonging to XIII group of the periodictable (representatively, boron) is added. As a method for adding, knownmeans may be used. In this way, an impurity region indicating p-typeconductive type (hereinafter, referred to p-type impurity region) 107 to111 is formed. Moreover, immediately below the gate electrodes 105 and106, channel formation regions 112 to 114 are fractioned and fixed. Itshould be noted that the p-type impurity regions 107 to 111 are a sourceregion or a drain region of the TFT.

Subsequently, the protective film (herein, silicon nitride film) 115 isformed in a film thickness of 50 nm, then, the activation of the elementbelonging to XIII group of the periodic table, which has added, isperformed by performing the heat processing. This activation may beperformed by either of furnace annealing, laser annealing or a lumpannealing, or performed by combining these. In the present example, theheat processing at 500° C. for 4 hours is performed under the atmosphereof nitrogen.

When the activation is terminated, it is effective to performhydrogenation. As for hydrogenation processing, known hydrogen annealingtechnology or plasma hydrogenation technology may be used.

Subsequently, as shown in FIG. 2 C, the first interlayer insulating film116 consisted of an organic resin film such as polyimide, acryl,polyimideamide or the like is formed into a thickness of 800 nm. Thesematerials are coated with spinner, it is heated, burned or polymerizedand formed, thereby capable of being smoothing the surface. Moreover,since an organic resin material is in general low in dielectricconstant, parasitic volume can be reduced. It should be noted that asthe first interlayer insulating film 116, an inorganic insulating filmmight be used.

Subsequently, the second interlayer insulating film 117 is formed on thefirst interlayer insulating film 116. The second interlayer insulatingfilm 117 may be formed by an insulating film for absorbing an impurityion, preferably absorbing a metal element, and further preferablyabsorbing an alkaline metal or an alkaline-earth metal,representatively, a silicon nitride film containing fluorine at thecomposition ratio of 1 to 5%, an organic resin film containing aparticle consisted of an antimony compound (Sb₂O₅, nH₂O), or a laminatedlayer made by combining these. In the present Example, an organic resinfilm containing antimony pentaoxide (Sb₂O₅ nH₂O) of which the averageparticle diameter is 10 to 20 nm is used. After antimony pentaoxideparticle and polymethyl silceschioxane copolymer were dispersed in anorganic solvent of glycols, ethers, alcohols, ketones, and the coatingwas performed by spin coat or the like, the film is formed by hardening.As for hardening means, hardening may be performed by heating orirradiation of ultraviolet ray.

Moreover, in the case where as an insulating film for absorbing analkaline metal or an alkaline-earth metal, a silicon nitride filmcontaining fluorine at the composition ratio of 1 to 5% is used, thedegas from the first interlayer insulating film 116 is made not to exerta bad influence on the luminescent element.

It is capable of being configured so that the diffusion of an impurityion from a cathode containing an alkaline metal and an alkaline-earthmetal formed later does not exert a bad influence on the active layer ofTFT by employing an insulating film for absorbing an alkaline metal oran alkaline-earth metal for the second interlayer insulating film 117.Moreover, the diffusion of an impurity ion to the active layer of TFT iscontemplated by providing the first interlayer insulating film 116 andenhancing the flatness, and by widening the interval of distance betweenthe insulating film for absorbing an alkaline metal or an alkaline-earthmetal and the active layer of TFT.

Subsequently, a resist mask of the desired pattern is formed, a contacthole reaching to the drain region of TFT is formed by performing anetching of the interlayer insulating film, and the wirings 118 to 121are formed. As a wiring material, Al and Ti as an electricallyconductive metal film are used, besides these, these alloy material areused, after it is formed into a film by a sputter method and vacuumvapor deposition method, it may be patterned into the desired shape.

In this stage, TFT is completed. On the pixel section of the luminescentdevice, the TFT for switching 201 and the TFT for current control 202are formed, at the same time, the TFT for deleting (not shown) is alsoformed. It should be noted that the gate electrode of TFT for deletingis formed by one portion of gate wirings different from the gate wiringsfor forming the gate electrode of the TFT 201 for switching. It shouldbe noted that in the present example, all of these TFT are formed byp-channel type TFT. Moreover, although here not shown, the retentionvolume is also formed. The retention volume is formed by lower retentionvolume formed by the semiconductor layer formed at the same time withactivation layer of TFT and by the wirings for forming gate insulatingfilms and gate electrodes, and upper retention volume formed by thewirings for forming gate electrodes, the protective film, the firstinterlayer insulating film, the second interlayer insulating film andthe current supplying wirings. Moreover, the semiconductor layer iselectrically connected to the current supplying wires.

Subsequently, an electrically conductive film having an opticaltransparency which is to be the anode 122 of the luminescent element,that is, herein an ITO film is formed. Moreover, as for the anode 122, amaterial having a work function larger than that of the material forforming the cathode, and further, a material having a sheet resistancethan that of ITO film, concretely, a material such as platinum (Pt),Chromium (Cr), tungsten (W), or Nickel (Ni) can be used. It should benoted that the film thickness of this time is preferably made in therange from 0.1 to 1 μm. Moreover, these metal elements used for theanode is also absorbed by the second interlayer insulating film 117, andthe diffusion into TFT may be prevented.

Subsequently, as shown in FIG. 2 D, the anode 122 is formed by etchingan electrically conductive film.

Then, an organic resin film consisted of polyimide, acryl, andpolyimideamide is formed over the whole surface. As for these, a heathardening material which is hardened by heating, or a photosensitivematerial which is hardened by irradiating ultraviolet ray can beemployed. In the case where the heat hardening material is used, then,resist mask is formed, an insulating layer 123 having an opening portionis formed on the anode 122 by dry etching. In the case where aphotosensitive material is used, the insulating layer 123 having anopening portion is formed on the anode 122 by performing the exposureusing photomask, and by performing a developing processing. Any way, theinsulating layer 123 is formed so that the end portion of the anode 122is covered and it has the edge in a taper shape. The coating property ofthe organic compound layer formed later is capable of being improved byforming an edge in a taper shape.

Subsequently, the hole generation layer 124 is formed on the anode 122.It should be noted that in the present example, the hole generationlayer 124 is a film having transparency, formed by co-vapor depositing alow molecular material and electron receptor as an organic material. Itshould be noted that as a low molecular material, such as condensed ringhydrocarbon including anthracene, tetracene, pyrene and the like, linearparaffin, oligothiophene based material and phthalocyanine basedmaterial can be used, as electron receptor, TCNQ(tetracyano-quinodimethan), FeCl₃, ZrCl₄, HfCl₄, NbCl₅, TaCl₅, MoCl₅,and WCl₆ can be utilized.

Moreover, when the hole generation layer 124 is formed, the ratio of thelow molecular material to the electron receptor is preferably 1:1 at themolar ratio.

It should be noted that the patterning could be performed to the holegeneration layer 124 into a shape as shown in FIG. 2 E by forming thehole generation layer using a metal mask by a vapor deposition method.The hole generation layer 124 is formed as described above.

After the hole generation layer 124 has been formed, an organic layer125 laminated by combining a plurality of layers such as the holeimplantation layer, the hole transport layer, the hole inhibition layer,the electron transport layer, the electron implantation layer and thebuffer layer besides the luminescent layer is formed. Moreover, theorganic layer 125 is formed in a thickness of about 50 nm (FIG. 3 A). Itshould be noted that in the present example, including the holegeneration layer 124 and the organic layer 125, it is referred to anorganic compound layer 130. It should be noted that as an organiccompound for forming the organic compound layer, the low molecule basedmaterial or the high molecule based material may be used, a single layerusing a known material or a laminated layer can be formed by combiningthese in multiple combination.

Next, the cathode 126 is formed by a vapor deposition method (FIG. 3 B).As a material to be the anode 126, besides Al—Li alloy and Mg—Ag alloy,a film formed using elements belonging to I group or II group of theperiodic table and aluminum by co-vapor deposition method can be used.It should be noted that the film thickness of the cathode 126 ispreferably in the range from 80 to 200 nm. Here, an electrode containinga large amount of an alkaline metal or an alkaline-earth metal isformed, however, an alkaline metal or an alkaline-earth metal whichpromotes the deterioration of the TFT is absorbed by the secondinterlayer insulating film 117, and the invasion of these into the TFTcan be prevented.

By the processes described above, the luminescent element 127 consistedof the anode 122, the organic compound layer 130 and the cathode 126 canbe completed.

Furthermore, as shown in FIG. 3 C, the luminescent element 127 is sealedwith the cover member 128 or the like, entered into the space 129 andsealed. As a result of this, the luminescent element 127 can becompletely shut out, and the invasion of the substances which promotesthe deterioration of the organic compound layer such as moisture andoxygen from the exterior can be prevented.

It should be noted that as a material configuring the cover member 128,besides glass substrate, quartz substrate, a plastic substrate consistedof FRP (Fiberglass-Reinforced Plastics), PVF (polyvinylfluoride), Mylar,polyester or acryl and the like can be used.

Moreover, the present example corresponds to embodiment 1, and the samereference numerals are used and attached at the same locations.

Example 2

Referring to FIG. 4, the external appearance of a light emitting deviceof the present invention will be described in the present invention.

FIG. 4A is a top view of the light emitting device, and FIG. 4B is asectional view taken on line A-A′ of FIG. 4A. Reference number 701represents a source signal line driving circuit, which is shown by adotted line; 702, a pixel section; 703, a gate signal line drivingcircuit; 710, a substrate; 704, a cover material; and 705, a sealant. Aspace 707 is surrounded by the substrate 710, the cover material 704,and the sealant 705.

Reference number 708 represents an interconnect ion for transmittingsignals inputted to the source signal line driving circuit 701 and thegate signal line driving circuit 703. The interconnection 708 receivesvideo signals or clock signals from a flexible print circuit (FPC) 709,which will be an external input terminal. Only the FPC is illustrated,but a printed wiring board (PWB) may be attached to this FPC. The lightemitting device referred to in the present specification may be the bodyof the light emitting device, or a product wherein an FPC or a PWB isattached to the body.

The following will describe a sectional structure, referring to FIG. 4B.The driving circuits and the pixel section are formed on the substrate710, but the source signal line driving circuit 701 as one of thedriving circuits and the pixel section 702 are shown in FIG. 4B.

In the source signal line driving circuit 701, a CMOS circuit wherein ann-channel type TFT 713 and a p-channel type TFT 714 are combined isformed. The TFTs constituting the driving circuit may be composed ofknown CMOS circuits, PMOS circuits or NMOS circuits. In the presentexample, a driver-integrated type, wherein the driving circuit is formedon the substrate, is illustrated, but the driver-integrated type may notnecessarily be adopted. The driver may be fitted not to the substratebut to the outside.

The pixel section 702 is composed of plural pixels including acurrent-controlling TFT 711 and an anode 712 electrically connected tothe drain of the TFT 711.

In the anode 712, slits are made. On the both sides of the anode 712,insulators 715 are formed, and an organic compound layer 717 composed ofa hole injection layer 716, a hole generating layer, a hole transportlayer, a light emitting layer and an electron transport layer is formed.Furthermore, a cathode 718 is formed on the insulators 715 and theorganic compound layer 717. In this way, a light emitting element 719composed of the anode, the organic compound layer and the cathode isformed.

The cathode 718 also functions as an interconnection common to all ofthe pixels, and is electrically connected through the interconnection708 to the FPC 709.

In order to confine the light emitting element 719 formed on thesubstrate 710 airtightly, the cover material 704 is adhered to thesubstrate 710 with the sealant 705. A spacer made of a resin film may beset up to keep a given interval between the cover material 704 and thelight emitting element 719. An inert gas such as nitrogen is filled intothe space 707 inside the sealant 705. As the sealant 705, an epoxy resinis preferably used. The sealant 705 is desirably made of a materialthrough which water content or oxygen is transmitted as slightly aspossible. Furthermore, it is allowable to incorporate a material havingmoisture absorption effect or a material having antioxidation effectinto the space 707.

In the present example, as the material making the cover material 704,there may be used a glass substrate, a quartz substrate, or a plasticsubstrate made of fiber glass-reinforced plastic (FRP), polyvinylfluoride (PVF), mylar, polyester or polyacrylic resin.

After the adhesion of the cover material 704 to the substrate 710 withthe sealant 705, a sealant is applied so as to cover the side faces(exposure faces).

As described above, the light emitting element is airtightly put intothe space 707, so that the light emitting element can be completely shutout from the outside and materials promoting deterioration of theorganic compound layer, such as water content and oxygen, can beprevented from invading this layer from the outside. Consequently, thelight emitting device can be made highly reliable.

When any one of the structures of Embodiment modes 1 to 3, and Example 1is airtightly confined inside a space to manufacture a light emittingdevice, the structure of the present invention may be freely combinedwith the structure.

Example 3

A light emitting device of the present invention can be made up to apixel section illustrated in FIG. 5A. The circuit configuration of thedevice illustrated in FIG. 5A is illustrated in FIG. 5B.

In FIG. 5A, reference number 801 represents a switching TFT, which is ann-channel type TFT. An interconnection 802 is a gate interconnection forconnecting gate electrodes 804 (804 a and 804 b) of the switching TFT801 electrically.

In the present example, a double-gate structure, wherein twochannel-formed areas are laid out, is adopted. However, a single-gatestructure, wherein a single channel-formed area is formed, or atriple-gate structure, wherein three channel-formed areas are formed,may be adopted.

The source of the switching TFT 801 is connected to a sourceinterconnection 805, and the drain thereof is connected to a draininterconnection 806. The drain interconnection 806 is electricallyconnected to a gate electrode 808 of the current-controlling TFT 807.The current-controlling TFT 807 is made up of a p-channel type TFT. Inthe present example, a single-gate structure is adopted. However, adouble-gate structure or a triple-gate structure may be adopted.

In the present example, the switching TFT 801 is made up of an n-channeltype TFT, and the current-controlling TFT 807 is made up of a p-channeltype TFT. However, the switching TFT 801 may be made up of a p-channeltype TFT, and the current-controlling TFT 807 may be made up of ann-channel type TFT. Both of them may be made up of n-channel type TFTsor p-channel type TFTs.

The source of the current-controlling TFT 807 is electrically connectedto a current-supplying line 809, and the drain thereof is electricallyconnected to a drain interconnection 810. The drain interconnection 810is electrically connected to an electrode (anode) 811 shown by a dottedline. By forming an organic compound layer and an electrode (cathode) onthe electrode (anode) 811, a light emitting element 815 illustrated inFIG. 5B can be formed.

In a region 812, a retention capacitor (condenser) is formed. Thecondenser 812 is composed of a semiconductor film 813 electricallyconnected to the current-supplying line 809, an insulating film (notillustrated) as the same layer which constitutes the gate insulatingfilm, and a capacitor electrode 814 electrically connected to the gateelectrode 808. A capacitor composed of the capacitor electrode 814, thesame layer (not illustrated) that constitutes an interlayer dielectric,and the current-supplying line 809 may be used as a retention capacitor.

The structure of the pixel section described in the present example maybe combined instead of the pixel section described in Example 1.

Further, in the present example, the pixel section and TFT (n-channeltype TFT and p-channel type TFT) of the driver circuit provided in theperiphery of the pixel section are formed simultaneously on the samesubstrate. In addition, the light emitting element connectedelectrically to the TFT is formed in the pixel section so as to form anelement substrate.

Example 4

An example of light from a light emitting element being emitted in adownward direction through a substrate is shown in Example 1. In thepresent example, however, an example of light emitted from a lightemitting element in an upward-direction is shown in FIGS. 6A and 6B.

Note that although a glass substrate is used as a substrate 600 in thepresent example, quartz substrates, silicon substrates, metallicsubstrates, and ceramic substrates may also be used.

Active layers of each TFT are prepared with at least a channel formingregion, a source region, and a drain region in FIG. 6A. Further, theactive layers of each TFT are covered by a gate insulating film, and agate electrode is formed so as to overlap with the channel formingregion through the gate insulating film. An interlayer insulating filmis formed covering the gate electrode, and electrodes that areelectrically connected to the source region or the drain region of eachof the TFTs are formed on the interlayer insulating film. A cathode 622that is electrically connected to a current control TFT 602, ann-channel TFT, is then formed. Further, an insulating layer 623 havingan opening portion is formed covering an edge portion of the cathode 622and having a tapered shape border. An organic compound layer composed ofan organic layer 624 and a hole injecting layer 625 is formed on thecathode 622, and an anode 626 is formed on the organic compound layer,thus forming a light emitting element. Note that the light emittingelement is sealed by a covering material while maintaining a space.

In the present example, an active layer of TFT is overlapped with thegate insulating film, the protective film, the organic resin film, andthe interlayer insulating film formed out of film 617 absorbing impurityion, sequentially. According to this structure, a diffusion of impurityion (typically, alkaline metal ion) from the light emitting element canbe prevented enough.

It is preferable to form the cathode using Al or an Al—Li aluminumalloy, which have small work functions. A transparent conductive film isused in the anode, and it is possible to use materials such as acompound of indium oxide and tin oxide (referred to as ITO), a compoundof indium oxide and zinc oxide, tin oxide, and zinc oxide for thetransparent conductive film.

In the present example, nonconductive compounds include the alkali metalor the alkali earth metal (referred to as the alkali compoundhereinafter) can be formed on all cathodes before the organic compoundlayer is formed. As for the alkali compound, lithium fluoride (LiF),lithium oxide (Li₂O), barium fluoride (BaF₂), barium oxide (BaO),calcium fluoride (CaF₂), calcium oxide (CaO), strontium oxide (SrO) orcesium oxide (Cs₂O) can be used.

Especially, the structure of the present example is effective in thecase that the materials such as the alkali metal or alkali earth metalto the cathode, the anode, the buffer layer, or the organic compoundlayer.

In the present example, film 617, which absorbs an impurity ion, may usethe organic resin film which contains the corpuscle made of nitridesilicon film including a great quantity of fluoride, antimony (Sb)compound, tin (Sn) compound, or indium (In) compound or lamination filmof these.

The light emitting device may have a light emitting element, in whichlight generated from the organic compound layer radiate to the outsideto the direction of the arrow shown in FIG. 6 by the present example.

Further, in the present example, the pixel section and TFT (n-channeltype TFT and p-channel type TFT) of the driver circuit provided in theperiphery of the pixel section are formed simultaneously on the samesubstrate. In addition, the light emitting element connectedelectrically to the TFT is formed in the pixel section so as to form anelement substrate.

Example 5

A light emitting device using a light emitting element is self-luminousand therefore is superior in visibility in bright surroundings comparedto liquid crystal display devices and has wider viewing angle.Accordingly, it can be used for display portions of various electricequipments.

Given as examples of electric equipment employing a light emittingdevice formed by the present invention is applied are: a video camera; adigital camera; a goggle type display (head mounted display); anavigation system; an audio reproducing device (car audio, an audiocomponent, and the like); a laptop computer; a game machine; a portableinformation terminal (a mobile computer, a cellular phone, a portablegame machine, an electronic book, etc.); and an image reproducing device(specifically, a device equipped with a display device which canreproduce a recording medium such as a digital versatile disk (DVD), andcan display the image). The light emitting device having a lightemitting element is desirable particularly for a portable informationterminal since its screen is often viewed obliquely and is required tohave a wide viewing angle. Specific examples of the electric equipmentare shown in FIGS. 7A to 7H.

FIG. 7A shows a display device, which comprises a casing 2001, asupporting base 2002, a display portion 2003, speaker portions 2004, avideo input terminal 2005, etc. The light emitting device formed by thepresent invention is applied can be used for the display portion 2003.The light emitting device having a light emitting element isself-luminous and does not need a backlight, so that it can make athinner display portion than liquid display devices can. The termdisplay device includes every display device for displaying informationsuch as one for a personal computer, one for receiving TV broadcasting,and one for advertisement. In addition, the display shown in FIG. 7A issmall-medium type or large type, for example, screen of the displaysized 5 to 20 inches. Moreover, it is preferable to mass-produce byexecuting a multiple pattern using a substrate sized 1×1 m to form suchsized display section.

FIG. 7B shows a digital still camera, which comprises a main body 2101,a display portion 2102, an image receiving portion 2103, operation keys2104, an external connection port 2105, a shutter 2106, etc. The lightemitting device formed by the present invention is applied can be usedfor the display portion 2102.

FIG. 7C shows a laptop computer, which comprises a main body 2201, acasing 2202, a display portion 2203, a keyboard 2204, an externalconnection port 2205, a pointing mouse 2206, etc. The light emittingdevice formed by the present invention is applied can be used for thedisplay portion 2203.

FIG. 7D shows a mobile computer, which comprises a main body 2301, adisplay portion 2302, a switch 2303, operation keys 2304, an infraredray port 2305, etc. The light emitting device formed by the presentinvention is applied can be used for the display portion 2302.

FIG. 7E shows a portable image reproducing device equipped with arecording medium (a DVD player, to be specific). The device comprises amain body 2401, a casing 2402, a display portion A 2403, a displayportion B 2404, a recording medium (DVD) reading portion 2405, operationkeys 2406, speaker portions 2407, etc. The display portion A 2403 mainlydisplays image information whereas the display portion B 2404 mainlydisplays text information. The light emitting device formed by thepresent invention is applied can be used for the display portions A 2403and B 2404. The term image reproducing device equipped with a recordingmedium includes video game machines.

FIG. 7F shows a goggle type display (head mounted display), whichcomprises a main body 2501, display portions 2502, and arm portions2503. The light emitting device formed by the present invention isapplied can be used for the display portions 2502.

FIG. 7G shows a video camera, which comprises a main body 2601, adisplay portion 2602, a casing 2603, an external connection port 2604, aremote control receiving portion 2605, an image receiving portion 2606,a battery 2607, an audio input portion 2608, operation keys 2609, etc.The light emitting device formed by the present invention is applied canbe used for the display portion 2602.

FIG. 7H shows a cellular phone, which comprises a main body 2701, acasing 2702, a display portion 2703, an audio input portion 2704, anaudio output portion 2705, operation keys 2706, an external connectionport 2707, an antenna 2708, etc. The light emitting device formed by thepresent invention is applied can be used for the display portion 2703.If the display portion 2703 displays white characters on a blackbackground, power consumption of the cellular phone can be reduced.

If the luminance of light emitted from organic materials is increased infuture, the light emitting device having a light emitting element can beused also in a front or rear projector in which light bearing outputtedimage information is magnified by a lens or the like to be projected ona screen.

The electric equipment given in the above often displays informationdistributed through electronic communication lines such as Internet andCATV (cable television), especially, animation information withincreasing frequency. The light emitting device having a light emittingelement is suitable for displaying animation information since organicmaterials have fast response speed.

In the light emitting device, portions that emit light consume power.Therefore, it is desirable to display information such that as smallportions as possible emits light. Accordingly, if the light emittingdevice is used for a display portion that mainly displays textinformation such as a portable information terminal, in particular, acellular phone, and an audio reproducing device, it is desirable toassign light emitting portions to display text information whileportions that do not emit light serve as the background.

As described above, the application range of the light emitting deviceto which the present invention is applied is very wide and electricequipment of every field can employ the device. The electric equipmentsin this example may use the light emitting device formed in Examples 1to 4 to the display portion thereof.

Conventionally, an insulating film provided between a TFT and an ELelement had a performance only for blocking an impurity ion ofcomparatively low level, but by making it a configuration of theabove-described present invention, the diffusion of an impurity ion(representatively, alkaline metal ion and alkaline-earth metal ion) fromthe EL element can be sufficiently prevented.

Accordingly, a luminescent element having a higher reliability comparingto the conventional element can be formed. Moreover, an electricappliance having a high performance can be obtained using a luminescentdevice having such a luminescent element as a display section.

1. A luminescent device comprising: a thin film transistor provided overan insulating surface; a luminescent element electrically connected withsaid thin film transistor, comprising: an organic compound layer; ananode; a buffer layer containing an alkaline metal; and a cathode; andat least one insulating layer provided between said thin film transistorand said luminescent element, wherein said insulating layer is capableof adsorbing said alkaline metal.
 2. A device according to claim 1,wherein said at least one insulating layer comprises a silicon nitridefilm containing fluorine at a concentration of 1×10¹⁹/cm³ or more.
 3. Adevice according to claim 1, wherein said at least one insulating layercomprises an organic resin film containing a particle comprising anantimony (Sb) compound, a tin (Sn) compound, or indium (In) compound. 4.A device according to claim 1, wherein said at least one insulatinglayer comprises a laminated layer of a silicon nitride film containingfluorine at a concentration of 1×10¹⁹/cm³ or more and an organic resinfilm containing a particle comprising an antimony (Sb) compound, a tin(Sn) compound, or indium (In) compound.
 5. A device according to claim1, wherein said insulating layer comprises a silicon oxynitride film ora silicon oxide film containing fluorine at a concentration of1×10¹⁹/cm³ or more.
 6. A luminescent device comprising: a thin filmtransistor provided over an insulating surface; a luminescent elementelectrically connected with said thin film transistor, comprising: anorganic compound layer; an anode; and a cathode containing analkaline-earth metal; and at least one insulating layer provided betweensaid thin film transistor and said luminescent element, wherein saidinsulating layer is capable of adsorbing said alkaline-earth metal.
 7. Adevice according to claim 6, wherein said at least one insulating layercomprises a silicon nitride film containing fluorine at a concentrationof 1×10¹⁹/cm³ or more.
 8. A device according to claim 6, wherein said atleast one insulating layer comprises an organic resin film containing aparticle comprising an antimony (Sb) compound, a tin (Sn) compound, orindium (In) compound.
 9. A device according to claim 6, wherein said atleast one insulating layer comprises a laminated layer of a siliconnitride film containing fluorine at a concentration of 1×10¹⁹/cm³ ormore and an organic resin film containing a particle comprising anantimony (Sb) compound, a tin (Sn) compound, or indium (In) compound.10. A device according to claim 6, wherein said insulating layercomprises a silicon oxynitride film or a silicon oxide film containingfluorine at a concentration of 1×10¹⁹/cm³ or more.
 11. A luminescentdevice comprising: a thin film transistor provided over an insulatingsurface; a luminescent element electrically connected with said thinfilm transistor, comprising: an organic compound layer containing analkaline-earth metal; an anode; and a cathode; and at least oneinsulating layer provided between said thin film transistor and saidluminescent element, wherein said insulating layer is capable ofadsorbing said alkaline-earth metal.
 12. A device according to claim 11,wherein said at least one insulating layer comprises a silicon nitridefilm containing fluorine at a concentration of 1×10¹⁹/cm³ or more.
 13. Adevice according to claim 11, wherein said at least one insulating layercomprises an organic resin film containing a particle comprising anantimony (Sb) compound, a tin (Sn) compound, or indium (In) compound.14. A device according to claim 11, wherein said at least one insulatinglayer comprises a laminated layer of a silicon nitride film containingfluorine at a concentration of 1×10¹⁹/cm³ or more and an organic resinfilm containing a particle comprising an antimony (Sb) compound, a tin(Sn) compound, or indium (In) compound.
 15. A device according to claim11, wherein said insulating layer comprises a silicon oxynitride film ora silicon oxide film containing fluorine at a concentration of1×10¹⁹/cm³ or more.
 16. A luminescent device comprising: a thin filmtransistor provided over an insulating surface of a substrate; aluminescent element electrically connected with said thin filmtransistor, comprising: an organic compound layer; an anode; a bufferlayer containing an alkaline-earth metal; and a cathode; and at leastone insulating layer provided between said thin film transistor and saidluminescent element wherein said insulating layer is capable ofadsorbing said alkaline-earth metal.
 17. A device according to claim 16,wherein said at least one insulating layer comprises a silicon nitridefilm containing fluorine at a concentration of 1×10¹⁹/cm³ or more.
 18. Adevice according to claim 16, wherein said at least one insulating layercomprises an organic resin film containing a particle comprising anantimony (Sb) compound, a tin (Sn) compound, or indium (In) compound.19. A device according to claim 16, wherein said at least one insulatinglayer comprises a laminated layer of a silicon nitride film containingfluorine at a concentration of 1×10¹⁹/cm³ or more and an organic resinfilm containing a particle comprising an antimony (Sb) compound, a tin(Sn) compound, or indium (In) compound.
 20. A device according to claim16, wherein said insulating layer comprises a silicon oxynitride film ora silicon oxide film containing fluorine at a concentration of1×10¹⁹/cm³ or more.